RAS PhysicsКристаллография Crystallography Reports

  • ISSN (Print) 0023-4761
  • ISSN (Online) 3034-5510

GALLIUM NANOPARTICLES OBTAINED ON SILICON SUBSTRATES BY THERMAL EVAPORATION METHOD

PII
10.31857/S0023476123020091-1
DOI
10.31857/S0023476123020091
Publication type
Status
Published
Authors
Volume/ Edition
Volume 68 / Issue number 2
Pages
313-318
Abstract
Gallium nanostructures have been obtained on silicon substrates by thermal evaporation in an argon atmosphere. The sizes, density, and shape of Ga particles have been determined by computer processing of electron SEM-images. The condensation of Ga on Si substrates for 10, 15, and 20 s ensured the formation of particles of several types: spherical, triangular, square, and in the form of rods and polyhedrons. The increase in the Ga condensation time to 20 s led to the increase in the density of spherical nanoparticles by 41%.
Keywords
GALLIUM NANOPARTICLES THERMAL EVAPORATION METHOD
Date of publication
15.09.2025
Year of publication
2025
Number of purchasers
0
Views
13

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