RAS PhysicsКристаллография Crystallography Reports

  • ISSN (Print) 0023-4761
  • ISSN (Online) 3034-5510

COMPARATIVE X-RAY DIFFRACTOMETRY OF THE DEFECT STRUCTURE OF ZnO EPITAXIAL FILMS DEPOSITED BY MAGNETRON SPUTTERING ON C-PLANE Al2O3 SUBSTRATES IN INHOMOGENEOUS ELECTRIC FIELD

PII
10.31857/S0023476123020212-1
DOI
10.31857/S0023476123020212
Publication type
Status
Published
Authors
Volume/ Edition
Volume 68 / Issue number 2
Pages
180-188
Abstract
The results of studying the specific features of the growth of zinc oxide films formed on sapphire substrates by magnetron sputtering in an inhomogeneous electric field are presented. The films have been analyzed by high-resolution X-ray diffractometry, pole figure technique, and electron microscopy. A sequence of changes in the lateral structure with an increase in the film thickness, which depends also on the local potential, is revealed. Thus, regions with a higher surface potential correspond to the ZnOá10 0ñ(0001)||Al2O3á11 0ñ(0001) epitaxial ratio with the least lattice mismatch.
Keywords
X-RAY DIFFRACTOMETRY ZnO EPITAXIAL FILMS MAGNETRON SPUTTERING
Date of publication
15.09.2025
Year of publication
2025
Number of purchasers
0
Views
12

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