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Defect structure of tin-doped inas single crystals grown by the Czochralski method
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Defect structure of tin-doped inas single crystals grown by the Czochralski method
Annotation
PII
S0023476124030041-1
Publication type
Article
Status
Published
Authors
T. G. Yugova 
Affiliation: The State Research and Design Institute of the Rare Metal Industry (JSC Giredmet)
Edition
Volume 69 Issue number 3
Pages
400-404
Abstract
Indium arsenide (InAs) single crystals heavily doped with Sn are found to have various violations of structural perfection, which depend on the Sn concentration in different regions of crystal. At low charge-carrier (electron) concentrations (~1.5 × 1018 cm–3) an unusual annular distribution of dislocations in the cross section is observed for the initial parts of crystal. The dislocation density lies in the range of (0.1–1.0) × 104 cm–2. At a carrier concentration above 4.0 × 1018 cm–3 indium inclusions and “vicinal growth hillocks” are observed in the final parts of crystals. The dislocation density in the final cross sections of crystals, in which the aforementioned defects are not observed, is in the range of (0.4–2.1) × 104 cm–2.
Received
03.09.2024
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References

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