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RAS PhysicsКристаллография Crystallography Reports

  • ISSN (Print) 0023-4761
  • ISSN (Online) 3034-5510

Dynamics of new phase formation in silicon during femtosecond laser ablation

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PII
S0023476125010039-1
DOI
10.31857/S0023476125010039
Publication type
Article
Status
Published
Authors
Е. I. Mareev
  • Affiliation: Shubnikov Institute of Crystallography of Kurchatov Complex of Crystallography and Photonics of NRC “Kurchatov Institute”
F. V. Potemkin
  • Occupation: Faculty of Physics
  • Affiliation: Lomonosov Moscow State University
Volume/ Edition
Volume 70 / Issue number 1
Pages
18-27
Abstract
We experimentally demonstrated (using micro-Raman spectroscopy and transmission electron microscopy) and through numerical modeling that when an intense (1013−1014 W/cm²) femtosecond (~100 fs) laser pulse impacts the surface of silicon with (111) orientation, new polymorphic phases Si-III and Si-XII are formed on the surface and in the volume, localized in lattice defects as well as at the periphery of the ablation crater. This localization of phases is caused by the multi-stage nature of laser-induced phase transitions in silicon, specifically, the phase transitions are initiated by a shock wave, resulting in a cascading transformation process on sub-nanosecond timescales: Si-I => Si-II => => Si-III/Si-XII. The phase transition Si-I => Si-II occurs at the front of the shock wave, while at the rear of the shock wave, a field of dynamic stresses arises in the material, allowing the phase transition Si-II => Si-III/Si-XII to occur. On sub-microsecond timescales, most of the new phases disappear as the material relaxes back to its original state.
Keywords
Date of publication
15.09.2025
Year of publication
2025
Number of purchasers
0
Views
59

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