RAS PhysicsКристаллография Crystallography Reports

  • ISSN (Print) 0023-4761
  • ISSN (Online) 3034-5510

Partially Disordered Crystalline State in a Thin GeSbTe Film: Manifestation of Thermally Induced Nanoscale Effect

PII
S30345510S0023476125050113-1
DOI
10.7868/S3034551025050113
Publication type
Article
Status
Published
Authors
Volume/ Edition
Volume 70 / Issue number 5
Pages
810-816
Abstract
Using a pulsed electron diffraction instrument, a phase transition in a ~10 nm GeSbTe (GST) film was studied upon heating it from room temperature to ~400°C. During crystallization of a free-standing amorphous sample, the formation of a hexagonal GST phase was detected, for which mixing Sb and Ge leads to a formal violation of translational symmetry and unit cell symmetry. However, upon heating an identical amorphous GST film on a carbon membrane, the crystalline state turned out to be represented only by a cubic phase. Within the framework of the Phillips theory, a qualitative explanation is proposed for such a nanoscale effect in GST, which opens up new possibilities for controlling structural ordering in phase-change memory materials (PCMM).
Keywords
Date of publication
20.01.2025
Year of publication
2025
Number of purchasers
0
Views
30

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