- PII
- 10.31857/S0023476124020151-1
- DOI
- 10.31857/S0023476124020151
- Publication type
- Article
- Status
- Published
- Authors
- Volume/ Edition
- Volume 69 / Issue number 2
- Pages
- 314-318
- Abstract
- Thin films of CdTe were grown on Si (111) and Al2O3 (0001) substrates by thermal deposition from the gas phase. The obtained films were studied using atomic force microscopy, scanning electron microscopy, and X-ray diffraction analysis. It was found that on Al2O3 (0001) substrates, thin films of both wurtzite and sphalerite modifications of CdTe can be obtained. On Si substrates, thin films of the sphalerite modification of CdTe can be obtained. It is shown that the elemental composition of thin films is close to stoichiometry, and in the case of thin films grown on Al2O3 (0001), the deviation did not exceed 1 at. %.
- Keywords
- Date of publication
- 15.09.2025
- Year of publication
- 2025
- Number of purchasers
- 0
- Views
- 13
References
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