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Morphology and spatial distribution of ordered domains in GaInP/GaAs(001) according to transmission electron microscopy
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Morphology and spatial distribution of ordered domains in GaInP/GaAs(001) according to transmission electron microscopy
Annotation
PII
S0023476124040108-1
Publication type
Article
Status
Published
Authors
А. V. Myasoedov 
Affiliation: Ioffe Institute RAS
Edition
Volume 69 Issue number 4
Pages
646-651
Abstract
The structure of epitaxial films of the GaInP solid solution, in which ordering occurs, was studied using transmission electron microscopy. The films were grown by metalorganic vapor phase epitaxy on GaAs (001) substrates near the half-composition point. During the study, dark-field images obtained using superstructure reflections for cross-sectional and plan-view specimens of films were analyzed. The morphology and relative spatial arrangement of ordered domains have been determined. The phenomenon of spontaneous self-organization of regions with CuPt–B+ and CuPt–B– ordering near the surface was discovered, while in the bulk of the film the domains are uniformly located and mutually overlap each other. The effect of spatial separation of domains is associated with the lattice relaxation, leading to a change in the surface topology.
Acknowledgment
Ministry of Science and Higher Education of the Russian Federation (RFMEFI62117X0018).
Received
21.09.2024
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