RAS PhysicsКристаллография Crystallography Reports

  • ISSN (Print) 0023-4761
  • ISSN (Online) 3034-5510

Conduction Band Electronic States of Fluorine-Substituted Furan-Phenylene Co-Oligomer Film on the Surfaces of Silicon and Zinc Oxide

PII
S30345510S0023476125050137-1
DOI
10.7868/S3034551025050137
Publication type
Article
Status
Published
Authors
Volume/ Edition
Volume 70 / Issue number 5
Pages
824-829
Abstract
The results of the study of low-energy secondary electronic spectra of films of fluoro-substituted furan-phenylene co-oligomer in the energy range from 5 to 20 eV above EF are presented. Thermal vacuum deposition of films with a thickness of 8–10 nm was performed on the surface of (SiO2)n-Si substrates and layer-by-layer deposited ZnO. The collocation of the main maxima of the density of the electronic states in the conduction band of the studied films and the properties of the potential barrier between the films and the substrate surfaces were determined. The surface topography of thin films of fluorine-substituted furan-phenylene co-oligomer was studied by atomic force microscopy. The films on the ZnO surface have a granular structure with a grain diameter in the surface plane of about 100 nm. On the (SiO2)n-Si surface, the grains have an elongated shape, characteristic of microwhiskers.
Keywords
Date of publication
27.06.2025
Year of publication
2025
Number of purchasers
0
Views
43

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