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Effect of a traveling magnetic field on the parameters of doped tellurium gallium arsenide single crystals grown by the chokhralsky method
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Effect of a traveling magnetic field on the parameters of doped tellurium gallium arsenide single crystals grown by the chokhralsky method
Annotation
PII
S0023476124030036-1
Publication type
Article
Status
Published
Authors
T. G. Yugova 
Affiliation: The State Research and Design Institute of the Rare Metal Industry (JSC Giredmet)
Edition
Volume 69 Issue number 3
Pages
393-399
Abstract
The effect of a traveling magnetic field on the parameters of Te-doped GaAs single crystals in the carrier density range of 5 × 1017–2 × 1018 cm–3 has been studied. A traveling magnetic field was induced in a melt by a graphite inductor located in the setup chamber around the main heater. It is shown that a high-frequency magnetic field slightly reduces the dislocation density in the crystals without changing the shape of the dislocation distribution over their cross sections. The magnetic field affects the impurity distribution along the crystal axis, almost doubling the distance between the striation bands from 9 µm in the absence of magnetic field to 17 µm in a field with a frequency of 300 Hz.
Received
03.09.2024
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